Transport equations for semiconductors / A. Jüngel.

By:

Jüngel, Ansgar, 1966-

Material type: Text

text

Media type:

computer

Carrier type:

online resource

ISBN:

9783540895268
3540895264

Subject(s):

Additional physical formats: Print version:: Transport equations for semiconductors.DDC classification:

537.622 22

LOC classification:

QC1 .L36 v.773

Other classification:

33.72
53.56
O471

Online resources:

Click here to access online

Contents:

Introduction -- Microscopic Semi-Classical Models -- Macroscopic Semi-Classical Models -- Microscopic Quantum Models -- Macroscopic Quantum Models -- Index.

Summary: Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.

Holdings ( 1 )
Title notes ( 4 )

Holdings
Item type	Current library	Collection	Call number	Status	Date due	Barcode	Item holds
eBook	e-Library	eBook LN Physics		Available

Total holds: 0

Includes bibliographical references and index.

Print version record.

Introduction -- Microscopic Semi-Classical Models -- Macroscopic Semi-Classical Models -- Microscopic Quantum Models -- Macroscopic Quantum Models -- Index.

Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.