Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / edited by Alexei N. Nazarov and Jean-Pierre Raskin.

By:

(6th : International Workshop on Semiconductor-on-Insulator Materials and Devices (6th : 2010 : Kiev, Ukraine) [issuing body.]

Contributor(s):

Material type: Text

TextSeries: Advanced materials research ; 276.Publisher: Durnten-Zurich, Switzerland : Trans Tech Publications, [2011]Distributor: Enfield, N.H. : Distributed in the Americas by Trans Tech Publications, [date of distribution not identified]Copyright date: ©2011Description: 1 online resource (199 pages) : illustrationsContent type:

text

Media type:

computer

Carrier type:

online resource

ISBN:

9783038136156
3038136158

Subject(s): Genre/Form:

Additional physical formats: Print version:: Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine.DDC classification:

621.38152

LOC classification:

TK7871.85 .I584397 2010eb

Online resources:

EBSCOhost

Summary: This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.

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Title notes ( 4 )

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Item type	Current library	Collection	Call number	Status	Date due	Barcode	Item holds
eBook	e-Library	EBSCO Technology		Available

Total holds: 0

Includes bibliographical references and indexes.

Print version record.

This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.

Master record variable field(s) change: 050